The nano-scale structures of the transistor are smaller
than the mean-free path of the electrons, which travel in a ballistic, non-ohmic
manner in the semiconductor. The device does not have a conventional
junction, like convenitional transistors, and uses a non-linearity phenomenon
which only exists in the ballistic regime.
Applications:
This fundamentally new transistor concept is expected to
operate in the THz frequency range. It will be used in ultra-high speed
digital, analog and mixed signal circuits. Initial applications are
expected in high speed telecommunication switches and THz analog to digital
converters for "software" radio. Current wired and wireless
telecommunication devices typically demodulate an analog FM signal and then
convert it to a digital signal suitable for digital signal processing.
With this new transistor available, analog mixers, demodulators and
down-conversion mixers are eliminated, reducing the power
usage.
Advantages:
Since there are no conventional junctions, the operating
voltage is very low, making it suitable for low power applications. The
projected power usage is expected to be 10% of conventional designs. Unlike
conventional designs, this design will improve with reduced scale fabrication
processes by using even less power and becoming more accurate with a better
signal to noise ratio. The ultra-high speed capability will enable
new approaches to telecommunications and computing.