Ballistic Deflection Transistor and Ballistic Deflection Transistor Based Logic Circuits

The nano-scale structures of the transistor are smaller than the mean-free path of the electrons, which travel in a ballistic, non-ohmic manner in the semiconductor. The device does not have a conventional junction, like convenitional transistors, and uses a non-linearity phenomenon which only exists in the ballistic regime.

Applications:

This fundamentally new transistor concept is expected to operate in the THz frequency range. It will be used in ultra-high speed digital, analog and mixed signal circuits. Initial applications are expected in high speed telecommunication switches and THz analog to digital converters for "software" radio. Current wired and wireless telecommunication devices typically demodulate an analog FM signal and then convert it to a digital signal suitable for digital signal processing. With this new transistor available, analog mixers, demodulators and down-conversion mixers are eliminated, reducing the power usage.

Advantages:

Since there are no conventional junctions, the operating voltage is very low, making it suitable for low power applications. The projected power usage is expected to be 10% of conventional designs. Unlike conventional designs, this design will improve with reduced scale fabrication processes by using even less power and becoming more accurate with a better signal to noise ratio. The ultra-high speed capability will enable new approaches to telecommunications and computing.

URV Reference Number: 2-11144-07001

Category(s):

Computer Hardware

For Information, Contact:

Curtis Broadbent

Licensing Manager

University of Rochester

585.273.3250

curtis.broadbent@rochester.edu

Inventors:

Martin Margala

Quentin Diduck

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Keywords:

CMOS Design